Thermally Engineered CVD for Controlling Crystal Orientation and Strain in Large-Area PtTe₂ Layers

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Platinum ditelluride (PtTe₂) is a topological semimetal with significant optoelectronic potential.
• Scalable synthesis methods are crucial for realizing the technological applications of PtTe₂.

Purpose of the Study:

• To develop controllable synthesis techniques for large-area platinum ditelluride (PtTe₂) films.
• To investigate methods for controlling the crystalline orientation and introducing microscopic corrugation in PtTe₂ films.

Main Methods:

• Synthesis of PtTe₂ films via tellurization of pre-deposited platinum layers.
• Modification of tellurization parameters (thermal budget, heating rate) to control film properties.
• Raman spectroscopy analysis to characterize strain in corrugated films.

Main Results:

• Achieved large-area PtTe₂ film synthesis with controllable layer orientation.
• Demonstrated control over crystalline growth directions, shifting from (001) to (1-13)/(103).
• Introduced microscopic corrugation in PtTe₂ films, resulting in localized tensile and compressive strains.

Conclusions:

• Selective modification of tellurization parameters enables precise control over PtTe₂ film structure and strain.
• This control offers a robust platform for strain engineering in topological semimetals.
• The findings pave the way for tailored optoelectronic properties and advanced applications of PtTe₂.