Engineering Properties of GeSi Alloy Quantum Dots by High-Temperature Annealing

GeSi alloy quantum dots (QDs) are a promising candidate for a light source implemented in Si-based monolithic optoelectronic integrated circuits (MOEICs) thanks to their telecom-wavelength emission and the compatibility with the Si integration technology. Herein, the engineering properties of GeSi alloy QDs are demonstrated via rapid thermal annealing (RTA). The PL spectra of GeSi alloy QDs exhibits remarkably enhanced intensity and an initial red shift followed by a blue shift with increasing annealing temperature. Particularly, it can be characterized as a single narrow peak at ~1.55 µm of the intensity enhanced by ~20 times after the RTA at 1100 °C. These features are attributed to the progressively enhanced intermixing and the abnormal transition from compressive strain to tensile strain in QDs with increasing annealing temperature, which are demonstrated by Raman spectra and transmission electron microscopy (TEM) images. Moreover, a large polycrystalline-domain appears around QD at a sufficiently high annealing temperature. It facilitates the tensile strain in QDs, which arises during the RTA due to the thermal expansion coefficient mismatch between Ge and Si. These results demonstrate that high-temperature annealing can efficiently modulate the properties of GeSi alloy QDs, particularly for emission at 1.55 µm, which may have great potential for an efficient Si-based light source.