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Related Concept Videos

Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...

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Related Experiment Video

Updated: Jun 27, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Linear Multiplication Beyond Geiger Mode Threshold in Ge-on-Si Avalanche Photodiode.

Dongyan Zhao1,2, Qiang Wen3, Fang Liu1

  • 1Beijing Smart-Chip Microelectronics Technology Company Ltd., Beijing 100192, China.

Micromachines
|June 26, 2026
PubMed
Summary
This summary is machine-generated.

This study reveals that germanium-on-silicon avalanche photodetectors (Ge-on-Si APDs) exhibit unique linear avalanche behavior due to interface traps. This behavior persists beyond Geiger mode, offering insights for optoelectronics.

Keywords:
Ge-on-SiGeiger modeavalanche photodiodeinterface trapslinear multiplicationshort-wave infrared detection

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Area of Science:

  • Optoelectronics
  • Semiconductor Physics
  • Materials Science

Background:

  • Germanium-on-silicon (Ge-on-Si) avalanche photodetectors (APDs) are crucial for optical communications.
  • Understanding their operational modes, especially beyond standard avalanche breakdown, is essential for device optimization.

Purpose of the Study:

  • To investigate the avalanche behavior of vertically structured Ge-on-Si APDs under ramp gating.
  • To analyze the impact of interface and deep-level traps on device performance.
  • To explore the device's response to short-wave infrared illumination.

Main Methods:

  • Fabrication of a vertically structured Ge-on-Si APD in a separate absorption, charge, and multiplication configuration.
  • Application of ramp gating to achieve bias beyond punch-through voltage.
  • Characterization of dark current and response to pulsed 1550 nm illumination.

Main Results:

  • Observed linear avalanche mode enabled by ramp gating, with dark current proportional to gating and thermal generation.
  • Linear multiplication behavior persisted even beyond Geiger mode voltages.
  • Negative differential resistance under illumination attributed to self-quenching and interface barrier modification.
  • Light-induced transient current decrease followed by inverse quenching restoring dark current.

Conclusions:

  • Ge/Si interface traps and fabrication-induced deep-level traps significantly influence Ge-on-Si APD behavior.
  • The device exhibits unique dynamic responses, including linear avalanche mode and illumination-induced quenching effects.
  • Findings provide critical insights for designing advanced Ge-on-Si photodetectors for optoelectronic applications.