Interface-Engineered, Low-Damage IGZO/HfO₂ Charge-Trapping Memory Devices Fabricated Using a Remote Plasma ALD...

In this study, charge-trapping memory (CTM) transistors were developed using indium gallium zinc oxide (IGZO) as the oxide semiconductor channel and high-k HfO₂ as the charge-trapping layer, aiming for next-generation nonvolatile memory applications. To evaluate the impact of plasma exposure on film quality and device performance, HfO₂ thin films were deposited via atomic layer deposition (ALD) using both direct plasma (DP) and remote plasma (RP) modes. Post-deposition annealing (PDA) was applied to the IGZO and HfO₂ layers, with experiments conducted at various annealing temperatures to enhance the interfacial stability between the HfO₂ layer and the IGZO channel. Electrical characterization results demonstrated that the RP-processed devices exhibited a wider memory window, reduced gate leakage current, and improved threshold voltage stability compared with the DP-processed devices. Thermal treatment effectively reduced the interfacial defect density and enhanced the crystallinity at the dielectric-channel interface. These findings underscore that the selection of the plasma process and annealing conditions is critical in determining the electrical characteristics and reliability of oxide semiconductor-based CTM devices.