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Published on: December 27, 2012
Effects of Y2O3/ZrO2 Particles on Dielectric Properties and Voltage Resistance of Polyimide Films
Duoduo Qian1, Minjiang Liu2, Yuxin Xia1
1School of Materials Science and Engineering, Tongji University, Shanghai 201804, China.
Abstract:
With the advancement of energy storage technology, there have been significantly increased demands for the storage performance and operating temperature of capacitor dielectric materials. As a high-temperature resistant polymer, polyimide (PI) shows great potential for application as a dielectric material. In this study, binary PI composite films with various contents of yttria-stabilized zirconia particles (YZPs) were prepared via in situ polymerization. The results demonstrated that the incorporation of YZPs enhanced the breakdown resistance compared to pure PI films. Specifically, at a YZP content of 8 wt%, the breakdown strength (BDS) of the composite films reached 566 kV·mm-1. Although the mechanical strength exhibited a slight reduction, the dielectric properties remained stable, leading to an overall improvement in energy storage performance. Overall, 2 wt% YZPs/PI (with 5 mol% Y2O3, ZPb2) film is optimal in terms of its mechanical and dielectric properties. This research establishes a solid foundation for the engineering development and industrial implementation of high-performance PI-based polymer dielectric materials.
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