Enhanced Performance of Near-Infrared Perovskite Light-Emitting Diodes with PEDOT:PSS Buffer Layer
Shaowen Chen1,2,3, Xiaodong Chi2,3, Piaoyang Shen2,3
1School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211, China.
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Perovskite light-emitting diodes (PeLEDs) have attracted considerable attention due to their outstanding electroluminescent properties and have achieved remarkable progress. However, charge injection imbalance remains a major obstacle limiting the performance of near-infrared (NIR) PeLEDs. Herein, we propose inserting a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) buffer layer between ITO and Zinc oxide (ZnO) to reduce electron injection. This layer also acts as a substrate to modulate ZnO surface roughness, thereby improving perovskite film quality. Through this optimization, the device's external quantum efficiency (EQE) increases from 20% to 22%, and its T50 operational lifetime extends from 3.4 h to 17.8 h. Importantly, we successfully integrate the PEDOT:PSS buffer layer into scalable fabrication, demonstrating NIR-PeLEDs with a uniform emission area of 2500 mm2.
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