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Spin Depolarization Mechanisms in Halide Perovskite Semiconductors
Huygen J Jöbsis1, Sascha Feldmann2
1Laboratory for Energy Materials, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Rue de l'Industrie 17, CH-1950 Sion, Switzerland. huygen.jobsis@epfl.ch.
Chimia
|June 26, 2026
Summary
Achieving long electron spin lifetimes in halide perovskites (HPs) is crucial for spin-optoelectronic devices. This review details spin relaxation mechanisms and experimental methods to identify them in HP semiconductors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Optoelectronics
Background:
- Halide perovskites (HPs) show promise for spin-optoelectronic applications.
- A major challenge is maintaining long electron spin lifetimes under ambient conditions.
Purpose of the Study:
- To review recent experimental findings on spin relaxation pathways in HP semiconductors.
- To provide a framework for identifying dominant spin relaxation mechanisms.
Main Methods:
- Outlining four major spin-relaxation mechanisms.
- Highlighting characteristic magnetic-field and temperature dependencies for each mechanism.
- Summarizing spectroscopic techniques for probing spin depolarization dynamics.
Main Results:
- Mechanistic 'fingerprints' enable identification of dominant relaxation channels.
- HP composition, crystal structure, and dimensionality influence prevailing relaxation mechanisms.
Conclusions:
- Understanding spin relaxation is key to advancing HP-based spin-optoelectronics.
- Spectroscopic techniques offer complementary insights into spin dynamics.
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