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Room-Temperature Intrinsic Nonlinear Planar Hall Effect in TaIrTe_{4}
Chang Jiang1,2, Fan Yang3, Yu Zhao4,5
1Fudan University, State Key Laboratory of Surface Physics and Department of Physics, Shanghai 200433, China.
Physical Review Letters
|June 26, 2026
Summary
Researchers discovered a new intrinsic nonlinear planar Hall effect in TaIrTe4. This quantum geometry-driven response persists to room temperature, paving the way for novel electronic devices.
Area of Science:
- Condensed Matter Physics
- Quantum Materials
- Solid-State Physics
Background:
- Intrinsic responses reveal fundamental material properties, independent of external factors.
- Quantum geometry of band structures offers insights into material behavior.
- Topological semimetals like TaIrTe4 are promising for novel electronic phenomena.
Purpose of the Study:
- To experimentally discover and characterize a new intrinsic charge transport response.
- To investigate the nonlinear planar Hall effect in the topological semimetal TaIrTe4.
- To explore the role of band geometry and orbital mechanisms in this effect.
Main Methods:
- Experimental measurement of charge transport in TaIrTe4.
- Application of electric fields and in-plane magnetic fields.
- Theoretical calculations to model the observed response and elucidate underlying mechanisms.
Main Results:
- Experimental discovery of the intrinsic nonlinear planar Hall effect in TaIrTe4.
- The effect is quadratic in electric field and linear in magnetic field.
- The response coefficient is linked to the Berry-connection polarizability dipole.
- The phenomenon is observed to persist up to room temperature.
Conclusions:
- TaIrTe4 exhibits a novel intrinsic nonlinear planar Hall effect.
- Band geometry and a previously unrecognized orbital mechanism are crucial.
- This discovery opens avenues for room-temperature nonlinear electronic devices.
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