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NiO_x/SAM-Mediated Interface Engineering for High-Performance PEA₂SnI₄ Pure-Red Perovskite Light-Emitting Diodes.

Jiaxing Zhu¹, Qi Xiao², Renqiang Yang²

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.

The Journal of Physical Chemistry Letters

|June 29, 2026

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We developed a novel molecule to reduce defects in tin-based perovskite LEDs, enhancing their efficiency and stability for eco-friendly optoelectronics. This interface engineering approach boosts performance in pure-red light-emitting diodes.

Area of Science:

Materials Science
Optoelectronics
Chemistry

Background:

Tin-based perovskite light-emitting diodes (PeLEDs) offer environmentally friendly optoelectronic solutions.
Interfacial defect states, especially at buried interfaces, limit the practical performance of these devices.

Purpose of the Study:

To mitigate interfacial defects in phenethylammonium (PEA)₂SnI₄-based pure-red PeLEDs.
To enhance the efficiency and stability of tin-based PeLEDs through interface engineering.

Main Methods:

Introduction of a self-assembled monolayer (SAM) molecule, [4-(3,6-dibromo-9H-carbazol-9-yl)butyl]phosphonic acid (Br-4P), combined with NiO_x.
Designing the SAM with tailored dimensions for structural synergy with PEA₂SnI₄.

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Utilizing the phosphate group of Br-4P for anchoring onto NiO_x.

Main Results:

The Br-4P SAM effectively passivated undercoordinated Sn²⁺ species and mitigated interfacial defects.
Insertion of Br-4P promoted superior crystallinity and uniform crystal orientation in PEA₂SnI₄ films.
Optimized PeLEDs achieved a peak external quantum efficiency of 6.19% at 623 nm, with a narrow FWHM of 27 nm and luminance of 226 cd·m^-2.

Conclusions:

Interface engineering using tailored SAMs is critical for unlocking the potential of tin-based perovskite emitters.
The developed Br-4P SAM strategy effectively addresses interfacial defects, paving the way for high-efficiency, nontoxic red PeLEDs.
This approach highlights a pathway for advancing environmentally benign optoelectronic devices.