Why more junctions do not yet deliver: interconnection challenges in perovskite multijunction solar cells

Rik Hooijer1, Sunwoo Kim2, Doyun Im2

  • 1Department of Chemistry and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität (LMU) Munich 81377 Germany erkan.aydin@cup.uni-muenchen.de.

Energy & Environmental Science
|June 29, 2026
PubMed
Summary

Perovskite-based multijunction solar cells overcome efficiency limits of single-junction technologies. Addressing interconnection challenges is key for scaling up these advanced photovoltaic devices.

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Junction Potentials in Galvanic Cells01:21

Junction Potentials in Galvanic Cells

The Nernst equation, derived under the assumption of thermodynamic equilibrium, calculates the electromotive force (emf) as the sum of potential differences at phase boundaries in a reversible cell without a liquid junction. However, in irreversible cells such as the Daniell cell, an additional potential difference named the liquid-junction potential (EJ) arises across the interface of two electrolyte solutions due to different ion diffusion rates. This EJ represents the potential difference...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Contact-dependent Signaling01:19

Contact-dependent Signaling

Contact-dependent signaling, as the name suggests, requires that communicating cells be in direct contact with each other. This is achieved either through receptor-ligand interactions or by specialized cytoplasmic channels that allow the flow of small molecules between cells. In animal cells, channels called gap junctions facilitate contact-dependent signaling in certain tissues, whereas, plasmodesmata perform a similar function in plants.
Gap Junctions
In animal cells, gap junctions are formed...