Related Experiment Video
Updated: Jun 30, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Interplay of magnetic proximity effect and epitaxial strain in transition metal monoxide antiferromagnetic
M Szpytma1,2, E Oleś1, A Kwiatkowski1
1Faculty of Physics and Applied Computer Science, AGH University of Krakow, Krakow, Poland.
Abstract:
Controlling magnetic order in antiferromagnetic (AFM) materials is crucial for advancing spintronic technologies. Although epitaxial strain and magnetic proximity effects are known to independently influence AFM properties, their combined interplay in all-antiferromagnetic heterostructures remains largely underexplored. Here, we employ element-specific X-ray magnetic linear dichroism (XMLD) spectroscopy to investigate how epitaxial strain and interfacial exchange coupling cooperatively tune magnetic ordering temperatures and spin orientations in MnO/NiO/CoO heterostructures grown on MgO(001) substrates. We demonstrate that magnetic proximity effects dramatically enhance the Néel temperature of ultrathin MnO when grown on CoO and NiO, showcasing the significant impact of interfacial exchange coupling. Through a systematic comparison of experimental and simulated angular-dependent XMLD measurements, we reveal that the NiO spin orientation is strongly governed by strain: the epitaxial tensile strain from MgO(001) stabilizes the out-of-plane alignment, while the compressive strain of the Cr buffer layers enforces the in-plane configuration. Remarkably, magnetic proximity to CoO overrides strain effects, imposing in-plane anisotropy within the NiO layer. In MnO/NiO bilayers, we observe bidirectional magnetic proximity effects, where out-of-plane-oriented NiO spins induce partial out-of-plane canting in MnO, while MnO simultaneously drives partial in-plane rotation of NiO spins. Our results establish that rational design of all-AFM heterostructures enables systematic control of antiferromagnetic order through the interplay of epitaxial strain and magnetic proximity, providing a versatile route for engineering spin configurations in AFM-based spintronic devices.
Related Concept Videos
Ferromagnetism
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
π Electron Effects on Chemical Shift: Overview
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Colors and Magnetism
When atoms or molecules absorb light at the proper frequency, their electrons are excited to higher-energy orbitals. For many main group atoms and molecules, the absorbed photons are in the ultraviolet range of the electromagnetic spectrum, which cannot be detected by the human eye. For coordination compounds, the energy difference between the d orbitals often allows photons in the visible range to be absorbed and emitted, which is seen as colors by the human eye.
Valence Bond Theory

