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CuI passivation layer for stabilizing BiI₃-sensitized QDSSCs: long-term performance stability assessment.

Shahroz Saleem¹, Tian-Yi Hu¹, Kezhen Hui¹

¹School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China. nanosci@snnu.edu.cn.

Dalton Transactions (Cambridge, England : 2003)

|June 29, 2026

Summary

This summary is machine-generated.

Copper iodide (CuI) passivation layers significantly enhance the performance stability of bismuth iodide (BiI3)-sensitized quantum dot solar cells (QDSSCs). This method prevents electrolyte-induced degradation, improving long-term device operation and efficiency.

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Area of Science:

Materials Science
Renewable Energy
Nanotechnology

Background:

Quantum dot-sensitized solar cells (QDSSCs) suffer from performance instability.
Electrolyte-induced degradation at the electron transport material (ETM)/quantum dot (QD) interface is a primary cause.
This degradation pathway remains underexplored.

Purpose of the Study:

To investigate passivation strategies for BiI3-sensitized QDSSCs.
To improve the performance stability of these solar cells.
To mitigate electrolyte-induced degradation at the ETM/QD interface.

Main Methods:

Utilized lead iodide (PbI2) and copper iodide (CuI) as passivation layers.
Employed BiI3 as the sensitizer in QDSSCs with solid-state electrolytes.
Characterized device performance and stability over 30 days.
Analyzed photoanode surface morphology using field emission scanning electron microscopy (FESEM).

Main Results:

CuI passivation improved performance stability over 30 days, maintaining 73.58% of initial efficiency (6.55% max to 4.82%).
PbI2 passivation showed inferior stability compared to CuI.
CuI created a less defective photoanode surface, minimizing ETM/electrolyte contact and electrolyte leakage.
Reduced leakage current and prevented sensitizer degradation under prolonged illumination.

Conclusions:

CuI passivation layers effectively enhance the performance stability of BiI3-sensitized QDSSCs.
CuI is superior to PbI2 for passivating the ETM/QD interface in these devices.
The passivation strategy successfully addresses electrolyte-induced degradation, paving the way for more robust QDSSCs.