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Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

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Short-Wave Infrared Organic Photodetectors With Ultralow Dark Current Density Under Biased Operating Conditions.

Kangzhe Liu¹, Xiang Luo¹, Bingyan Yin¹

¹Institute of Polymer Optoelectronic Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, National Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, P. R. China.

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|June 30, 2026

Summary

Researchers developed new organic photodetectors (OPDs) for short-wave infrared (SWIR) imaging. These SWIR-OPDs achieve ultralow dark current density under high bias, enabling high detectivity for advanced applications.

Keywords:

dark current narrow bandgap polymer organic photodetectors reverse bias short‐wave infrared

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Area of Science:

Organic electronics
Photodetector technology
Materials science

Background:

Commercial photodetectors require low dark current density (Jd) for high detectivity under bias voltage.
Suppressing Jd is challenging for organic photodetectors (OPDs), especially in the short-wave infrared (SWIR) spectrum.

Purpose of the Study:

To report SWIR-OPDs with ultralow Jd under high bias voltage.
To establish an alternative material platform for high-performance SWIR-OPDs.

Main Methods:

Development of a narrow bandgap p-type polymer (PDCBT-DTO2F) with a push-pull architecture.
Modification of polymer structure by substituting alkyl chains with alkoxy chains to enhance charge transfer and coplanarity.
Device optimization and characterization of SWIR-OPD performance.

Main Results:

The modified polymer exhibited intense SWIR absorption, high crystallinity, reduced trap density, and low energetic disorder.
Achieved ultralow Jd of 15.6 nA cm⁻² at -2 V and 58.1 nA cm⁻² at -5 V.
Realized a detectivity of 1.04 × 10¹² Jones at 1100 nm under -2 V bias.

Conclusions:

The developed PDCBT-DTO2F polymer provides a promising material platform for high-performance SWIR-OPDs.
The achieved performance ranks among the best for SWIR-OPDs operating under reverse bias.
Ultralow Jd under high bias voltage is attainable in SWIR-OPDs.