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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Published on: April 8, 2018

Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO.

Chang-Chang Huang¹, Bo-Cia Chen^2,3, Hao-Tse Lee¹

¹Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093,Taiwan.

|June 30, 2026

Summary

This summary is machine-generated.

Advanced membrane transfer techniques enable interface-layer-free integration of ferroelectric hafnium zirconium oxide (HZO) with indium oxide (In2O3) channels. This breakthrough enables stable, high-performance logic-in-memory devices compatible with semiconductor manufacturing.

Keywords:

HZO high-κ oxide transistors large-area transfer logic-in-memory computation transferable ferroelectrics

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Indium oxide (In2O3) shows promise for logic-in-memory (LOM) applications due to high electron mobility and low-temperature processing.
Direct integration of high-κ ferroelectrics like hafnium zirconium oxide (HZO) with In2O3 degrades interfaces, causing device instability.
Existing methods face challenges with chemical incompatibilities and interfacial defects.

Purpose of the Study:

To develop an interface-layer-free integration method for ferroelectric HZO and In2O3 channels.
To demonstrate the feasibility of using advanced membrane transfer techniques for LOM devices.
To create stable and high-performance dual-gate ferroelectric In2O3 transistors and reconfigurable logic circuits.

Main Methods:

Utilized advanced membrane transfer techniques to deposit a ferroelectric HZO layer onto In2O3 channels.
Formed a van der Waals-like junction with an approximate 0.8 nm interfacial gap, preserving In2O3 stoichiometry.
Fabricated dual-gate ferroelectric In2O3 transistors and integrated them into inverter circuits.

Main Results:

Achieved interface-layer-free integration, avoiding chemical incompatibilities and preserving In2O3 channel quality.
The transferred HZO exhibited a dielectric constant of 26 and low leakage current (<10^-7 A cm^-2 at 1 MV cm^-1).
Demonstrated dual-gate ferroelectric In2O3 transistors with a large memory window, stable endurance (>10^9 cycles), and reconfigurable NOR/NAND logic functions.

Conclusions:

The membrane transfer method provides a viable route for integrating ferroelectric HZO with In2O3 for LOM applications.
This approach overcomes interfacial degradation issues, leading to enhanced device performance and stability.
The process is compatible with silicon back-end-of-line thermal budgets and scalable for wafer-level integration, paving the way for high-density, multifunctional LOM architectures.