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Temperature-dependent recombination dynamics in BH/ZnBr2 Co-doped CsPbI3 thin films.
Haichuan Mu1, Kai Sheng1, Ruibin Wang2
1School of Physics, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, P. R. China. hcmu@ecust.edu.cn.
Physical Chemistry Chemical Physics : PCCP
|July 1, 2026
Summary
BH/ZnBr2 co-doping CsPbI3 perovskite films improves stability and suppresses non-radiative recombination. Optimal doping reduces recombination rates and enhances phase stability, crucial for efficient and durable perovskite devices.
Area of Science:
- Materials Science
- Solid State Physics
- Photovoltaics
Background:
- Cesium lead iodide (CsPbI3) perovskites are promising photovoltaic materials but suffer from instability and non-radiative recombination.
- Understanding defect evolution and carrier dynamics is crucial for improving CsPbI3 performance.
Purpose of the Study:
- To investigate the impact of BH/ZnBr2 co-doping on recombination dynamics and defect evolution in CsPbI3 thin films.
- To correlate doping levels with structural stability and carrier recombination pathways.
Main Methods:
- Temperature-dependent photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy.
- X-ray photoelectron spectroscopy (XPS) for surface analysis.
- Analysis of monomolecular recombination rate constant (k1) and exciton binding energy.
Main Results:
- Moderate BH/ZnBr2 co-doping suppresses trap-assisted non-radiative recombination and enhances structural stability.
- Optimally doped samples show low, temperature-independent k1, reduced exciton binding energy, and suppressed exciton-phonon coupling.
- Excessive doping activates deep-level defect pathways, increasing k1 with temperature and indicating a doping threshold near 140 K.
Conclusions:
- BH/ZnBr2 co-doping effectively passivates defects and improves the phase stability of CsPbI3 perovskite films.
- Carrier recombination behavior and environmental stability are intrinsically linked to temperature-dependent defect evolution.
- Optimized co-doping presents a viable strategy for developing stable and efficient CsPbI3-based optoelectronic devices.
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