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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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Published on: June 25, 2020

Vertically integrated gate-all-around nano-LED with enhanced radiative efficiency.

Yakshita Malhotra, Huabin Yu, Yixin Xiao

    Optics Express
    |July 2, 2026
    PubMed
    Summary

    We developed a gate-all-around nanoscale light-emitting diode (nano-LED) that significantly boosts efficiency by controlling carrier dynamics. This novel device overcomes surface recombination issues, paving the way for high-performance nanowire LEDs.

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    Area of Science:

    • Optoelectronics
    • Nanotechnology
    • Materials Science

    Background:

    • Device miniaturization demands efficient nanoscale light sources.
    • Submicron III-nitride emitters face efficiency bottlenecks due to surface carrier recombination.

    Purpose of the Study:

    • To report a gate-all-around (GAA) nanoscale light-emitting diode (nano-LED).
    • To demonstrate efficient carrier confinement and modulation in nano-LEDs.
    • To establish a platform for 3D optoelectronic integration.

    Main Methods:

    • Fabrication of a GAA nano-LED with a conformal gate electrode surrounding n-GaN and InGaN/GaN multiple-quantum-wells (MQWs).
    • Electrical modulation of surface potential to control carrier dynamics.
    • Analysis of electroluminescence and quantum yield under varying gate biases.

    Main Results:

    • The GAA structure suppresses surface recombination, confining light emission to the bulk region.
    • Transistor-like current modulation achieved, enabling full on-off switching of electroluminescence.
    • Negative gate bias reduced non-radiative leakage, yielding a fourfold enhancement in peak quantum yield.

    Conclusions:

    • Demonstrated the first vertically integrated GAA field effect transistor-LED platform at the nanoscale.
    • Established a promising route for high-efficiency nanowire LEDs.
    • Opened possibilities for large-scale 3D optoelectronic integration.