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Related Concept Videos

Atomic Force Microscopy01:08

Atomic Force Microscopy

Atomic force microscopy (AFM) is a type of scanning probe microscopy that can analyze topographic details of various specimens like ceramics, glass, polymers, and biological samples. AFM offers over 1000 times more resolution than the optical imaging system. Images generated from AFM are three-dimensional surface profiles, offering an advantage over the flat, two-dimensional images from other imaging techniques.
The AFM Probe
The probe is regarded as the heart of any AFM setup and comprises the...

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Updated: Jul 3, 2026

Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes
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Published on: January 19, 2020

Multi-mode interferometry for measuring the depth of deep silicon-etched microstructures.

Yunzhu Yue, Xingjian Jiang, Guannan Li

    Optics Express
    |July 2, 2026
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a flexible multi-mode spectral interferometry technique for non-destructively measuring deep silicon-etched microstructures. The method accurately quantifies depths of diverse micro-electro-mechanical systems (MEMS) and 3D integrated circuits.

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    Published on: February 11, 2020

    Area of Science:

    • Metrology
    • Microfabrication
    • Optical Engineering

    Background:

    • Deep silicon-etched microstructures are crucial for micro-electro-mechanical systems (MEMS) and advanced integrated-circuit packaging.
    • Accurate, non-destructive depth metrology is essential for quality control and development in these fields.

    Purpose of the Study:

    • To propose and demonstrate a flexible multi-mode spectral interferometry system for non-destructively measuring microstructures of diverse geometries.
    • To provide a versatile metrology solution for micro-scale features in MEMS and 3D integrated circuits.

    Main Methods:

    • Developed a multi-mode spectral interferometry apparatus capable of three distinct measurement modes: spectral reflectance (SR), optical coherence tomography-like, and image positioning-based spectroscopy (IP spectroscopy).
    • Adapted each mode for specific microstructure geometries, including narrow, high-aspect-ratio, and moderate/low aspect-ratio features.
    • Validated the system by measuring microstructures with widths from 1 to 50μm, depths from 12 to 546μm, and aspect ratios from 1.2:1 to 51:1.

    Main Results:

    • Demonstrated the applicability of spectral reflectance mode for narrow, high-aspect-ratio microstructures (width ≤10μm, aspect ratio ≥10:1).
    • Showcased the effectiveness of the optical coherence tomography-like mode for microstructures with moderate to low aspect ratios (width 10-30μm, aspect ratio ≤10:1).
    • Confirmed the suitability of IP spectroscopy for microstructures where the light spot is smaller than the feature width.

    Conclusions:

    • The proposed multi-mode spectral interferometry offers a flexible and accurate non-destructive metrology solution for a wide range of deep silicon-etched microstructures.
    • This technique addresses the critical need for precise depth measurement in the fabrication of MEMS and 3D integrated circuits.