Dual-Sided Interface Optimization Enables High-Brightness All-Solution-Processed ZnMgO-Based Green Perovskite QLEDs
Hailong Feng1, Yunqian Zhao1, Feilong Yu1
1National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Laboratory for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, China.
Small Methods
|July 3, 2026
Summary
This study enhances all-solution-processed perovskite quantum dot light-emitting diodes (P-QLEDs) by optimizing interfaces to prevent degradation. This leads to improved performance and efficiency in green-emitting P-QLEDs.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Perovskite quantum dot layers degrade when processed with ZnMgO ink, limiting the performance of solution-processed P-QLEDs.
- Interface engineering is crucial for advancing P-QLED technology.
Purpose of the Study:
- To develop a dual-sided interface optimization strategy for fabricating high-performance P-QLEDs.
- To mitigate the degradation of perovskite quantum dot layers during device fabrication.
Main Methods:
- Utilized zwitterionic ligands to cross-lock PQD surface ions, enhancing chemical and solvent tolerance.
- Optimized ZnMgO ink by changing the solvent to acetonitrile and removing hydroxyl groups to improve orthogonality.
Main Results:
- Successfully deposited ZnMgO on PQD films with minimal degradation.
- Achieved improved carrier injection and radiative recombination efficiency.
- Optimized P-QLEDs reached a maximum luminance of 134,920 cd m⁻² and a peak external quantum efficiency (EQE) of 8.3%.
Conclusions:
- The proposed dual-sided interface optimization effectively prevents PQD degradation.
- The optimized P-QLEDs demonstrate state-of-the-art performance for all-solution-processed green emitters.
