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First-principles study of defect chemistry and thermoelectric performance of CaMg2Sb2
Shuai Zhang1,2, Yuan Liu1, Wenjing Qiu1
1School of Physics and Electronic Information, Shandong Key Laboratory of Gallium Nitride Materials and Applications, Weifang University Weifang 261061 China lj_wfu@163.com 20170005@wfu.edu.cn.
Abstract:
The success of high-performance n-type Mg3Sb2 has sparked interest in n-type thermoelectric transport of other AM2X2 compounds. However, only a few such compounds have realized n-type transport so far, and their zT values remain low. Therefore, there is an urgent need to systematically understand the factors limiting their n-type thermoelectric performance. Here, using first-principles calculations, this work systematically investigates the defect chemistry, electronic structure, and thermoelectric properties of three-dimensional (3D) bulk CaMg2Sb2. Calculated results show that the n-type system shows a much higher power factor than the p-type counterpart, reaching 59 µW cm-1 K-1 at 300 K and 39 µW cm-1 K-1 at 725 K, and exhibits a maximum zT of ∼1.52 at 725 K. Defect analysis reveals that Sb-rich conditions favor the formation of Ca vacancies, while Mg-rich and Ca-rich conditions favor the formation of Mg and Ca interstitials, yielding n-type conduction with an electron concentration of 3 × 1016 cm-3 at 725 K. These findings suggest that establishing Mg-rich and Ca-rich growth conditions is one of the key factors for achieving high-performance n-type thermoelectric transport. This study is expected to provide theoretical guidance for achieving high-performance n-type CaMg2Sb2 thermoelectric materials.
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