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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
The Electrical Double Layer01:30

The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...

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Related Experiment Video

Updated: Jul 4, 2026

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition
10:27

Fabrication of Nano-engineered Transparent Conducting Oxides by Pulsed Laser Deposition

Published on: February 27, 2013

Light-Written Nonvolatile Polarization via Defect-Engineered Charge Trapping.

Boxun Liu1, Jiayu Li1, Huizhong Zeng1

  • 1Center on Nanoenergy Research, Institute of Science and Technology for Carbon Peak & Neutrality, School of Physical Science & Technology, Guangxi University, Nanning, China.

Advanced Materials (Deerfield Beach, Fla.)
|July 3, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a light-writable soft composite material with long-lasting polarization. Defect engineering in polymer-inorganic materials enables optical control of interfacial charge states for advanced electronics.

Keywords:
charge trappingdefect engineeringoptically written polarizationoxygen vacanciespolymer‐oxide composite

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Last Updated: Jul 4, 2026

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Published on: May 31, 2018

Area of Science:

  • Materials Science
  • Polymer Science
  • Nanotechnology

Background:

  • Controlling interfacial charge states in polymer-inorganic composites is crucial for advanced electronic applications.
  • Achieving optically writable and non-volatile polarization in soft dielectrics presents significant challenges.

Purpose of the Study:

  • To develop a Polydimethylsiloxane (PDMS)-based composite capable of light-induced interfacial polarization.
  • To utilize defect engineering in FeTiO3 nanoparticles to create tunable trap states for charge trapping.

Main Methods:

  • Spark plasma sintering was used to tune oxygen vacancy density in FeTiO3 nanoparticles.
  • A triboelectric nanogenerator was employed to quantify write-relax behavior and interfacial charge transfer.
  • Kelvin probe force microscopy was used to visualize the photo-written electrostatic state and its retention.

Main Results:

  • Illumination promoted interfacial charge transfer by reducing the metal-composite barrier, leading to rapid charge accumulation.
  • A significant fraction of photoexcited electrons became immobilized after light removal, resulting in slow polarization relaxation.
  • The composite demonstrated light-programmable polarization with long retention times.

Conclusions:

  • Defect-mediated charge trapping is a viable materials-level mechanism for achieving light-programmable polarization in soft composites.
  • This approach enables the creation of remotely addressable electrostatic interfaces for soft electronic systems.
  • The developed composite offers a novel pathway for non-volatile data storage and tunable electronic functionalities.