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Related Experiment Video

Updated: Jul 4, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient.

Gongwei Hu¹, Xiaoming Dong¹, Yihan Zhang¹

¹Hubei Engineering Research Center of Weak Magnetic-Field Detection, College of Mathematics and Physics, China Three Gorges University, Yichang, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|July 3, 2026

Summary

Researchers developed a tunable piezotronic effect using strain gradients in Gallium Nitride (GaN). This breakthrough enhances sensor performance and enables adaptive electronic systems for diverse applications.

Keywords:

bulk piezoelectric charges interface polar symmetry multifunction sensing strain gradient tunable piezotronic effect

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Characterization of Full Set Material Constants and Their Temperature Dependence for Piezoelectric Materials Using Resonant Ultrasound Spectroscopy

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Last Updated: Jul 4, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

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Published on: April 8, 2018

Characterization of Full Set Material Constants and Their Temperature Dependence for Piezoelectric Materials Using Resonant Ultrasound Spectroscopy

Characterization of Full Set Material Constants and Their Temperature Dependence for Piezoelectric Materials Using Resonant Ultrasound Spectroscopy

Published on: April 27, 2016

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Piezotronics enable mechanical stimuli to shape electronic systems, crucial for IoT and wearables.
Interface-dominated polarization limits performance tunability in current piezotronic sensors.

Purpose of the Study:

To realize a tunable piezotronic effect by triggering bulk-dominated polarization in GaN.
To overcome limitations of interface-dominated polarization for enhanced sensor applications.

Main Methods:

Utilized a macroscale tip-induced strain gradient to induce bulk polarization in GaN.
Investigated the role of interface polar symmetry and bulk piezo-charge shielding.
Examined the effect of indenter size and spherical tip radii on tunability.

Main Results:

Achieved a wide sensitivity tunability window (24,403) and high pressure sensitivity (223.2 meV·MPa⁻¹).
Demonstrated ultrahigh strain sensitivity (1.43 × 10⁸) and exceptional mechanical durability (10,000 cycles).
Showcased preserved electrical tunability under dynamic operation.

Conclusions:

Uncovered cooperative roles of bulk polarization and interface symmetry in transport modulation.
Established a viable strategy for continuous and wide-range performance tunability in mechanical sensors.
Enriched piezotronic physics with a novel bulk-dominated polarization mechanism.