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Vertically Stacked Indium Gallium Zinc Oxide-Based Three-Dimensional Integrated Circuits.

Yu Pan1,2,3, Wenhai Wang4, Yiwen Song3

  • 1Liaoning Academy of Materials, Shenyang 110167, China.

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Summary

Researchers developed advanced indium gallium zinc oxide (IGZO) transistors for monolithic 3D integration. This breakthrough enables high-performance, multi-tier oxide transistors for next-generation computing-in-memory circuits.

Keywords:
memory-logic integrationoxide semiconductorstacked transistorsthree-dimensional circuitsvia-hole interconnects

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Monolithic 3D (M3D) integration offers advantages over planar architectures for advanced integrated circuits.
  • Amorphous oxide semiconductors are suitable for M3D due to room-temperature deposition and uniformity.
  • Developing high-performance, multi-tier oxide transistors compatible with existing technologies is a significant challenge.

Purpose of the Study:

  • To present a threshold voltage modulation strategy for indium gallium zinc oxide (IGZO) transistors.
  • To enable the fabrication of high-performance, multi-tier oxide transistors for 3D integrated circuits.
  • To demonstrate functional computing-in-memory 3D circuits using these advanced transistors.

Main Methods:

  • Threshold voltage modulation of IGZO transistors through channel thickness control.
  • Surface modification using atomic-layer deposition.
  • Sequential layer-by-layer integration of a four-tier vertically stacked IGZO transistor array.
  • Fabrication of via-hole interconnects for circuit integration.

Main Results:

  • Optimized IGZO transistors achieved a low subthreshold swing of 150 mV/dec.
  • Achieved an on/off ratio exceeding 108 for the transistors.
  • Demonstrated functional computing-in-memory 3D circuits, including inverter modules and dynamic random access memory (DRAM) components.

Conclusions:

  • The developed threshold voltage modulation strategy is effective for high-performance IGZO transistors in M3D integration.
  • The successful fabrication of a four-tier transistor array and functional 3D circuits validates the approach.
  • This work significantly advances the application of oxide semiconductors in future advanced 3D integrated circuits.