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Nonlinear Optical-Active NaAlP2S6 Synthesized by the MOBQ Method: Synthesis, Structure, and Optical Properties
Zong-Ze Li1, Zheng-Ren Chen1, Sheng-Ping Guo1,2
1Yunnan Key Laboratory of Electromagnetic Materials and Devices, School of Materials and Energy, Yunnan University, Kunming 650500, P. R. China.
Inorganic Chemistry
|July 4, 2026
Summary
A new aluminum-based material, NaAlP2S6, was synthesized for nonlinear optical (NLO) applications. This thiophosphate exhibits a wide bandgap and ultrahigh laser-induced damage threshold, showing promise for NLO crystal development.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Optoelectronics
Background:
- Group 13 metal chalcogenides are vital infrared nonlinear optical (NLO) crystals.
- Group 13 metal chalcophosphates, especially Al-based, are underexplored.
- Al-based functional motifs hold potential for advanced NLO applications.
Purpose of the Study:
- To synthesize and characterize a novel quaternary thiophosphate, NaAlP2S6.
- To investigate the structural and NLO properties of NaAlP2S6.
- To explore the potential of Al-based chalcophosphates for NLO applications.
Main Methods:
- Synthesis via reactive flux NaCl-assisted metal oxide-boron-chalcogen (MOBQ) solid-state method.
- Crystallographic analysis to determine the orthorhombic Fdd2 structure.
- Experimental and theoretical calculations to evaluate optical properties and NLO response.
Main Results:
- NaAlP2S6 crystallizes in a 3D framework of AlS6 octahedra and P2S6 dimers.
- The material exhibits a wide bandgap (3.72 eV) and a moderate second harmonic generation (SHG) response (0.25 × AgGaS2).
- NaAlP2S6 demonstrates an ultrahigh laser-induced damage threshold (LIDT) of 14.7 × AgGaS2.
Conclusions:
- NaAlP2S6 is a promising new material for NLO applications.
- The P2S6 dimers are the primary contributors to the SHG response.
- Al-based chalcophosphates represent a new avenue for designing high-performance NLO crystals.

