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Yuriy E Vekovshinin1,2, Leonid V Bondarenko1, Alexandra Y Tupchaya1

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Researchers discovered a new way high-order Van Hove singularities (HOVHSs) naturally form in 2D materials. This interface-driven mechanism, observed in a lead monolayer on silicon, enhances electronic correlations without external tuning.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Surface Science

Background:

  • Van Hove singularities significantly influence electronic correlations in 2D systems by creating divergences in the density of states.
  • High-order Van Hove singularities (HOVHSs) are typically induced by external tuning of engineered band structures.
  • The intrinsic emergence of HOVHSs in realistic crystalline materials is not well understood.

Purpose of the Study:

  • To investigate the intrinsic formation of HOVHSs in realistic 2D materials.
  • To explore an interface-driven mechanism for stabilizing HOVHSs.
  • To understand the role of spin-orbit coupling and orbital hybridization in HOVHS formation.

Main Methods:

  • Epitaxial growth of an atomically thin lead (Pb) monolayer on a silicon (Si(111)) substrate.
  • Experimental characterization using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS).
  • Theoretical analysis using state-of-the-art ab initio calculations.

Main Results:

  • Demonstrated the intrinsic stabilization of a type-II HOVHS at nonregular points of the Brillouin zone in the Pb/Si(111) system.
  • Observed the HOVHS near the Fermi level within Rashba-split surface states, exhibiting a pronounced power-law density of states divergence.
  • Confirmed that HOVHS formation is driven by strong spin-orbit coupling and orbital hybridization at the interface, without external control.

Conclusions:

  • An interface-driven mechanism intrinsically stabilizes HOVHSs in realistic 2D materials.
  • This mechanism is crucial for generating strong electronic correlations in spin-orbit coupled systems.
  • The findings open new avenues for designing 2D materials with tailored electronic properties, particularly in 2D superconductors.