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Updated: Jul 7, 2026

Screening of Coatings for an All-Solid-State Battery Using In Situ Transmission Electron Microscopy
Published on: January 20, 2023
High-throughput screening of M-based layered compounds as solid-state electrolytes for chloride-ion batteries
Mengqi Wu1,2, Chenyang Jing1, Dexing Wang3
1Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Hebei Research Center of the Basic Discipline for Computational Physics, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China. gongpl@hbu.edu.cn.
None:
The development of solid-state electrolytes (SSEs) for chloride-ion batteries (CIBs) has lagged significantly behind that of electrode materials, primarily due to the difficulty in simultaneously achieving high structural stability, electronic insulation, and fast Cl- diffusion kinetics at room temperature. Drawing inspiration from the structural analogy between electrode materials and SSEs in cationic battery systems, this study adopts a materials design strategy that transforms layered CIB electrode materials into SSE candidates by substituting transition metals (TM) with equivalent non-transition main group metals (M). Through comprehensive first-principles high-throughput screening based on thermal, kinetic, and thermodynamic stability, we identify O-GaOCl (Pmmn space group) and Ca2GaO3Cl as the most promising SSE materials. Our analysis of electronic structures reveals that replacing TM3+ with M3+ eliminates partially filled d-orbitals near the Fermi level, resulting in wide bandgaps of 3.78 eV for O-GaOCl and 3.34 eV for Ca2GaO3Cl, satisfying the stringent insulation requirements for electrolytes. Evaluation of Cl- diffusion kinetics demonstrates that O-GaOCl exhibits an exceptionally low migration barrier of 0.25 eV, attributed to a concerted migration mechanism where two Cl- ions move simultaneously, reducing electrostatic repulsion. Ca2GaO3Cl shows a moderate barrier of 0.44 eV. Electrochemical window calculations indicate that O-GaOCl and Ca2GaO3Cl possess stable windows of 1.60 V and 3.28 V, respectively. These findings establish a viable pathway for designing CIB SSEs and position O-GaOCl and Ca2GaO3Cl as compelling candidates for enabling all-solid-state CIB technology.
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