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Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN-on-Si Quantum Wells.

Jing-Yang Chung1,2, Tara P Mishra1,2, Zackaria Mahfoud3

  • 1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|July 6, 2026
PubMed
Summary
This summary is machine-generated.

Nanoscale indium gallium nitride (InGaN) quantum wells show optical variations due to indium segregation, impacting LED performance. Strain management is key for better transistors and LEDs.

Keywords:
GaNLEDatom probe tomographycathodoluminescencedefectsoptical inhomogeneitiesphase separation

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Optoelectronics

Background:

  • High-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) rely on indium gallium nitride (InGaN) heterostructures.
  • Understanding InGaN properties is crucial for advanced electronic and optoelectronic devices.

Purpose of the Study:

  • To investigate nanoscale optical inhomogeneities in InGaN quantum wells.
  • To elucidate the origin of compositional segregation and its effect on device performance.
  • To provide insights for engineering strain and alloy composition in InGaN.

Main Methods:

  • High-resolution structural, elemental, and optical characterization of GaN-on-Si epitaxial heterostructures.
  • Atom probe tomography (APT) and scanning transmission electron microscopy (STEM).
  • Cathodoluminescence (CL) spectroscopy and Density Functional Theory (DFT) calculations.

Main Results:

  • Unresolved nanoscale optical inhomogeneities were observed in InGaN quantum wells.
  • Compositional segregation was identified as the cause, specifically in high-indium-content InGaN.
  • Segregation was linked to the relaxation of in-plane strain, stabilizing specific InGaN compositions.

Conclusions:

  • Compositional segregation in InGaN leads to optical inhomogeneities and affects LED performance.
  • Strain management and careful alloy selection are critical for controlling phase separation.
  • This research offers a pathway to improved strain engineering in HEMTs and homogeneous light emission in LEDs.