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Growth Mode-Dependent Bi Incorporation and Carrier Localization in GaAsBi Wires.

Chalermchai Himwas1, Aritath Thammathikul1, Nathachon Tachapisitpong1

  • 1Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand.

ACS Applied Materials & Interfaces
|July 8, 2026
PubMed
Summary

Controlled bismuth incorporation in GaAsBi wires was achieved by optimizing growth modes. This study defines a stable window for homogeneous Bi incorporation, crucial for infrared optoelectronics.

Keywords:
Bi incorporationGaAsBicarrier localizationmolecular beam epitaxyphotoluminescencevapor−liquid−solid growth

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Dilute bismide III-V semiconductors offer potential for infrared optoelectronics due to large band gap bowing and reduced Auger recombination.
  • Challenges exist in achieving controlled bismuth (Bi) incorporation and uniform optical quality in these materials.

Purpose of the Study:

  • To systematically investigate the link between growth mode, Bi incorporation, and carrier dynamics in GaAsBi wires.
  • To establish a quantitative growth-mode stability window for homogeneous axial Bi incorporation.
  • To understand the impact of growth transitions on carrier localization and thermal quenching.

Main Methods:

  • Molecular beam epitaxy (MBE) was used to grow GaAsBi wires.
  • Substrate temperature and V/III beam-equivalent pressure ratio were varied to control growth modes (planar, VLS, VS).
  • Scanning Transmission Electron Microscopy with Energy Dispersive Spectroscopy (STEM-EDS) and temperature-dependent photoluminescence were employed for analysis.

Main Results:

  • A process window for homogeneous axial Bi incorporation up to 2.4% was identified under stable vapor-liquid-solid (VLS) conditions.
  • Vapor-solid (VS) growth led to radial overgrowth and compositional averaging, unlike uniform axial incorporation in VLS.
  • Carrier dynamics, including localization and thermal quenching, were quantitatively analyzed using a two-activation Arrhenius model.
  • Homogeneous GaAsBi wires showed an internal quantum efficiency of ~0.2% at 260 K.
  • Axial GaAsBi/GaAs heterostructures were successfully grown, enabling band-structure engineering.

Conclusions:

  • The study establishes a quantitative growth-mode stability window for homogeneous axial Bi incorporation in GaAsBi wires.
  • VLS-to-VS growth transitions significantly impact carrier localization and thermal quenching behavior.
  • Controlled Bi incorporation and heterostructure formation in dilute bismide wires pave the way for advanced infrared optoelectronic devices.