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Related Concept Videos

Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Related Experiment Video

Updated: Jul 10, 2026

Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
10:39

Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls

Published on: April 12, 2018

Reconfigurable mmWave microchips co-integrating hBN switches on GaN.

Sebastian Pazos1,2, Andrés Fontana3, Yaqing Shen4,5

  • 1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore. spazos@frba.utn.edu.ar.

Nature
|July 8, 2026
PubMed
Summary

This study introduces novel memristive radio-frequency switches using hexagonal boron nitride for gallium nitride monolithic microwave integrated circuits (MMICs). These switches enable high-performance, programmable mmWave MMICs for advanced telecommunications.

Related Experiment Videos

Last Updated: Jul 10, 2026

Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
10:39

Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls

Published on: April 12, 2018

Area of Science:

  • Electrical Engineering
  • Materials Science
  • Telecommunications Engineering

Background:

  • Monolithic microwave integrated circuits (MMICs) are crucial for advanced telecommunications, but high-frequency switch integration presents challenges in area, cost, and performance.
  • Memristive radio-frequency switches offer potential advantages in fabrication and device performance, yet their integration into MMICs remained unrealized.

Purpose of the Study:

  • To demonstrate the first implementation of programmable millimetre-wave (mmWave) gallium nitride (GaN) MMICs utilizing memristive radio-frequency switches.
  • To integrate two-dimensional layered hexagonal boron nitride (hBN) memristive switches directly onto the back-end-of-line of GaN MMICs.

Main Methods:

  • Fabrication of back-end-of-line wideband switches operating up to 100 GHz using hBN memristors on GaN MMIC platforms.
  • Characterization of switch performance, including insertion loss, isolation, state retention, thermal stability, and power handling.
  • Integration of one-transistor, one-memristor cells for switch drivers and demonstration of memristive-configurable circuit elements.

Main Results:

  • Switches achieved insertion losses as low as 0.3 dB and isolation better than 15 dB.
  • Demonstrated long-term state retention (2 weeks), stable operation at 175°C, and a high extrapolated 1-dB compression point of 30.52 dBm.
  • Achieved 3,250 cycles of endurance with one-transistor, one-memristor cell integration, and successfully implemented programmable attenuators, power dividers, and resonators.

Conclusions:

  • Successfully demonstrated programmable mmWave GaN MMICs with integrated hBN memristive switches, overcoming previous integration limitations.
  • The developed memristive switches exhibit excellent electrical performance, stability, and endurance, paving the way for next-generation telecommunication circuits.
  • This work establishes a new platform for realizing advanced, reconfigurable RF functionalities within MMICs.