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Related Experiment Video

Updated: Jul 12, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Graphene high-temperature sensors based on segmented annealing process.

Yuning Li1, Haowen Yuan2, Chunlong Li3

  • 1Institute of Mircoelectronics, Beijing Jiaotong University, No.3 Shangyuancun Haidian District Beijing 100044 P. R. Chin, Beijing, 100044, China.

Nanotechnology
|July 9, 2026
PubMed
Summary

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This summary is machine-generated.

Researchers developed a novel graphene-based temperature sensor for extreme environments. A silicon nitride protective layer enables stable operation up to 1250 °C, overcoming limitations of traditional sensors for high-temperature applications.

Area of Science:

  • Materials Science
  • Sensor Technology
  • Nanotechnology

Background:

  • Traditional temperature sensors are limited to 200 °C, restricting use in high-temperature industrial and environmental applications.
  • Graphene's susceptibility to oxidation and impurities at high temperatures hinders its application in extreme environments.
  • Developing robust high-temperature sensors is crucial for operational reliability and safety in demanding conditions.

Purpose of the Study:

  • To develop a graphene-based high-temperature sensor with enhanced thermal stability and durability.
  • To address the limitations of graphene's oxidation and contamination at elevated temperatures.
  • To enable reliable temperature sensing in ambient air up to 1250 °C.

Main Methods:

  • Growth of a silicon nitride (Si3N4) protective layer on graphene surfaces.
Keywords:
GrapheneSegmented annealing processSi3N4Temperature sensor

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  • Application of segmented thermal annealing to enhance thermal stability and durability.
  • Fabrication of a graphene-based sensor utilizing the protective layer and annealing process.

    • Main Results:

    • A graphene-based high-temperature sensor capable of operating stably in ambient air up to 1250 °C was successfully fabricated.
    • The silicon nitride layer effectively prevented graphene oxidation and impurity contamination at high temperatures.
    • Segmented annealing mitigated stress and prevented passivation cracking/bubbling, ensuring sensor durability.

    Conclusions:

    • The developed thermal protection method significantly enhances graphene's thermal stability for high-temperature sensing.
    • The graphene-based sensor exhibits a broad measurement range, consistent resistance, and a compact design, suitable for diverse applications.
    • This approach offers potential for advanced high-temperature sensors in critical sectors like aerospace and energy.