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Updated: Jul 12, 2026

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
Published on: June 7, 2018
Emergent Atomic Ordering in Vacancy-Filling Heusler Alloys.
Qizhu Li1, Zirui Dong2, Zongyao Li1
1State Key Laboratory of Optoelectronic Information Acquisition and Protection Technology, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Vacancy-filling Heusler alloys show ordered atomic arrangements, impacting their properties. TiRu1.5Sb exhibits less ordering and lower thermal conductivity, beneficial for thermoelectric applications.
Area of Science:
- Materials Science
- Solid State Physics
- Crystallography
Background:
- Vacancy-filling Heusler alloys bridge conventional Heusler types.
- Partial vacancy filling and multiatomic components cause occupational disorder.
- This disorder challenges the formation of highly crystalline Heusler compounds.
Purpose of the Study:
- To experimentally observe atomic occupation ordering in Slater-Pauling semiconductors MRu1.5Sb (M = Ti, Zr, Hf).
- To investigate the relationship between structural ordering and thermal transport in these materials.
Main Methods:
- Experimental observation of atomic occupation.
- Analysis of crystallographic site occupancy (Ru on 4c and 4d Wyckoff positions).
- Characterization of supercell structure formation.
Main Results:
- Observed selective Ru occupation on 4c and 4d sites, forming an ordered superstructure.
- TiRu1.5Sb showed less pronounced occupational ordering than ZrRu1.5Sb and HfRu1.5Sb.
- TiRu1.5Sb exhibited anomalously low lattice thermal conductivity due to reduced ordering.
Conclusions:
- Atomic ordering in MRu1.5Sb semiconductors influences their thermoelectric properties.
- The interplay between structural order and thermal transport provides flexibility for vacancy-filling Heuslers in thermoelectrics.
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