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Updated: Jul 12, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Eight-qubit operation of a 300 mm SiMOS foundry-fabricated device
Andreas Nickl1, Nard Dumoulin Stuyck2,3, Paul Steinacker2,3
1School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, Australia. a.nickl@unsw.edu.au.
Abstract:
Silicon spin qubits are a promising platform for quantum computing due to their high coherence, controllability, and CMOS manufacturability, yet scalable implementations have so far been limited to a few qubits. Here, to take a step towards larger qubit systems, we tune and coherently control an eight-dot linear array of silicon spin qubits fabricated in a 300 mm CMOS-compatible foundry process, establishing operational scalability beyond the two-qubit regime. All eight qubits are successfully tuned and characterized as four double-dot pairs, exhibiting Ramsey dephasing times up to 41(2) μs and Hahn-echo coherence times up to 1.31(4) ms. Readout of the central four qubits is achieved via a cascaded charge-sensing protocol, enabling high-fidelity measurements of the entire multi-qubit array in a two step process. Additionally, we demonstrate a two-qubit gate operation between adjacent qubits with low phase noise. We show that silicon spin qubit arrays can be scaled to medium-sized arrays of 8 qubits while maintaining system coherence.

