High-Temperature Persistent Luminescence and Anti-Thermal Quenching in LiGa₅O₈ by Trap Engineering

Area of Science:

• Materials Science
• Solid-State Chemistry
• Luminescence

Background:

• High-temperature luminescent materials are vital for displays, data storage, and extreme environment imaging.
• Simultaneously achieving anti-thermal quenching photoluminescence (anti-TQ PL) and high-temperature persistent luminescence (HT-PersL) at elevated temperatures is a significant challenge.

Purpose of the Study:

• To develop a single material system capable of both anti-TQ PL and enhanced HT-PersL.
• To investigate a defect-engineering strategy for controlling luminescence properties at high temperatures.

Main Methods:

• Synergistic co-doping of Cu2+ and Zn2+ in LiGa5O8.
• Reconstruction of the deep trap hierarchy within the material.
• Characterization of luminescence properties under elevated temperatures.

Main Results:

• The engineered LiGa5O8:Cu2+, Zn2+ material demonstrated a thermally robust deep trap network.
• Efficient charge-carrier storage and thermally activated release at high temperatures were achieved.
• Significant anti-TQ PL and enhanced HT-PersL were observed, with a blue-to-red chromaticity shift.

Conclusions:

• The defect-engineering strategy effectively controls both anti-TQ PL and HT-PersL in a single material.
• This work provides a pathway for designing advanced luminescent materials for high-temperature applications.