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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jul 13, 2026

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH₃NH₃PbI₃ for Efficient Perovskite Solar Cells

Published on: March 19, 2017

In-Situ Constructed Cations for 2D/3D Perovskite Heterostructure for Stable and Efficient Photovoltaics.

Min Liu¹, Quanwen You¹, Licheng Liu¹

¹Institute For Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|July 11, 2026

Summary

This study introduces n-hexyl phosphonic acid (HPA) to create a 2D perovskite layer on 3D perovskite solar cells (PSCs), significantly boosting efficiency and stability by preventing ion migration and degradation.

Keywords:

carrier transfer interface engineering in‐situ reaction n‐hexyl phosphonic acid (HPA)two‐dimensional perovskite

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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

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Last Updated: Jul 13, 2026

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH₃NH₃PbI₃ for Efficient Perovskite Solar Cells

Published on: March 19, 2017

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Two-dimensional (2D) perovskite capping layers enhance 3D perovskite solar cells (PSCs) by passivating defects and improving stability.
Disordered A-site ion migration and spacer cation deprotonation threaten PSC performance and longevity.

Purpose of the Study:

To develop a novel method for constructing stable 2D/3D perovskite structures.
To mitigate A-site defects and improve the photovoltaic performance and operational stability of PSCs.

Main Methods:

In-situ construction of 2D perovskite using n-hexyl phosphonic acid (HPA) via hydrogen bonding with FA+ cations.
Formation of a 2D/3D perovskite heterostructure to enhance the formation energy of A-site defects.

Main Results:

Achieved power conversion efficiencies (PCEs) of 26.32% (0.072 cm2) and 24.91% (1.012 cm2).
Demonstrated excellent stability: retaining 95.5% efficiency after 3000h (30°C, N2), 92.5% after 45% RH air, and 90% after 800h (85°C, N2).
Implemented a 19.24% PCE on a 5 × 5 cm2 rigid module.

Conclusions:

HPA effectively forms a stable 2D perovskite capping layer, enhancing PSC performance and durability.
The developed 2D/3D perovskite strategy addresses key degradation pathways, paving the way for more robust solar cell technologies.