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Published on: June 30, 2018
Defect annihilation in block copolymer nanopatterning through solvent immersion annealing
Min Seong Kim1, Seokyoung Bae1, Sang Hyun Choi1
1Department of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea. soyounkim@snu.ac.kr.
Solvent immersion annealing (SIA) effectively reduces defects in block copolymer (BCP) thin films. This method enhances nanopattern alignment and offers a scalable solution for future lithography applications.
Area of Science:
- Materials Science
- Polymer Science
- Nanotechnology
Background:
- Directed self-assembly (DSA) of block copolymers (BCPs) is key for nanoscale pattern fabrication.
- Defects and processing control limit practical BCP applications.
Purpose of the Study:
- Introduce solvent immersion annealing (SIA) to improve BCP thin film alignment and reduce defects.
- Investigate SIA's effectiveness compared to solvent vapor annealing (SVA).
Main Methods:
- Applied SIA to shear-aligned polystyrene-b-poly(2-vinylpyridine) (PS-b-P2VP) thin films using solvent mixtures.
- Analyzed immersion time, solvent composition, and swelling effects.
- Utilized scanning electron microscopy (SEM) and grazing-incidence small-angle X-ray scattering (GISAXS).
Main Results:
- SIA rapidly reduced defects and improved long-range ordering in BCP films within minutes.
- Optimal SIA balanced chain rearrangement and film stability.
- SIA demonstrated superior swelling control and lower sensitivity to humidity than SVA.
- Large-area SEM and GISAXS confirmed scalable fabrication of well-aligned nanopatterns.
Conclusions:
- SIA is a robust and efficient method for fabricating BCP nanopatterns with reduced defect density.
- SIA offers significant potential for advancing lithography applications.
- This technique provides enhanced control over BCP self-assembly processes.
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