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Filamentary Nanoheater-Driven Phase-Change Memory with Reduced Lithography Dependence.

Shiwei Gao¹, Peng Xu¹, Ningning Rong¹

¹College of Physics, Donghua University, Shanghai 201620, China.

The Journal of Physical Chemistry Letters

|July 13, 2026

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This study introduces a novel phase-change memory (PCM) architecture using filamentary nanoheaters. This approach reduces lithography costs and enables faster, more reliable, and energy-efficient PCM devices.

Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Scaling of high-performance phase-change memory (PCM) is limited by expensive and complex lithography techniques.
Existing PCM architectures face challenges in achieving both high speed and reliability.

Purpose of the Study:

To develop a PCM architecture with reduced lithography dependence.
To enhance PCM performance through localized heating and improved material stability.

Main Methods:

Fabrication of a filamentary nanoheater-driven PCM using conventional UV lithography.
Formation of self-confined silver (Ag) conductive filaments (CFs) for localized Joule heating.
Utilizing carbon-doped SbTe (CST) for enhanced structural stability.

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Main Results:

Demonstrated confined phase transitions near the filament/phase-change layer interface via TEM.
Confirmed strong thermal localization effect using electrothermal simulations.
Achieved ultrafast switching (6 ns), low energy consumption (6.01 pJ), and high endurance (>1.6 × 10^5 cycles).

Conclusions:

The filamentary nanoheater-driven PCM architecture offers a simple and low-cost fabrication process.
Synergistic effects of localized heating and stable materials lead to superior PCM performance.
This approach overcomes limitations of advanced lithography for high-performance PCM scaling.