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Updated: Jul 14, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Elemental Selector for High-Density Memory Integration.

Shaojie Yuan¹, Pandeng Xuan², Meng Xu³

¹School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.

Nano-Micro Letters

|July 13, 2026

Summary

Researchers discovered amorphous selenium as a novel Ovonic threshold switching selector material for memory devices. This elemental material offers superior performance with ultralow leakage current and high endurance, overcoming limitations of traditional chalcogenides.

Area of Science:

Materials Science
Solid-State Physics
Electrical Engineering

Background:

Ovonic threshold switching (OTS) selectors are crucial for memory devices, but existing materials face challenges.

Keywords:

Elemental selenium Monatomic chalcogen Ovonic threshold switching selector Phase-change memory Valence alternation pair

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Multicomponent chalcogenides used in OTS selectors have trade-offs in leakage current, reliability, and stability.