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Bulk Spin-Orbit Torque-Driven Spin Hall Nano-Oscillators Using PtBi Alloys with Engineered Crystallinity.

Utkarsh Shashank¹, Akash Kumar^1,2,3, Tahereh Sadat Parvini^4,5,6

¹Applied Spintronics Group, Department of Physics, University of Gothenburg, Gothenburg 412 96, Sweden.

ACS Applied Materials & Interfaces

|July 13, 2026

Summary

We enhanced spin Hall nano-oscillators (SHNOs) using PtBi alloys, boosting spin Hall efficiency and reducing threshold current for energy-efficient neuromorphic computing and high-frequency devices.

Keywords:

auto-oscillation extrinsic side-jump scattering spin Hall effect spin Hall nano-oscillator spin−orbit torque

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Area of Science:

Spintronics
Materials Science
Nanotechnology

Background:

Spin-orbit-torque-driven auto-oscillations in spin Hall nano-oscillators (SHNOs) are key for energy-efficient nanoscale microwave devices.
Lowering the threshold current (I_th) is crucial for robust SHNO oscillations, but conventional methods to enhance spin Hall efficiency (θ_SH) have drawbacks.

Purpose of the Study:

To enhance the bulk spin Hall effect in PtBi alloys through crystallographic engineering.
To reduce the threshold current and improve performance metrics of SHNOs.

Main Methods:

Crystallographic engineering of PtBi alloys.
DC-bias spin-torque ferromagnetic resonance to extract spin Hall efficiency.
Fabrication and characterization of 100 nm SHNOs using CoFeB/PtBi heterostructures.

Main Results:

Achieved a 3-fold increase in spin Hall efficiency (θ_SH) in PtBi alloys (up to 0.24) compared to pure Pt (0.07).
Reduced threshold current (I_th) by 42% and 32% in SHNOs utilizing PtBi alloys.
Observed narrower linewidths (~25 MHz), enhanced quality factors (up to 550), and a 61.6% reduction in threshold power.

Conclusions:

PtBi alloys are efficient spin Hall materials, enabling significant performance improvements in SHNOs.
This advancement facilitates reduced power consumption for SHNO-based neuromorphic and memory technologies.