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Related Concept Videos

Alkali Metals03:06

Alkali Metals

Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
Table 1: Properties of the alkali metals
Complexation Equilibria: The Chelate Effect01:19

Complexation Equilibria: The Chelate Effect

In complexation reactions, metal atoms or cations interact with ligands to form donor-acceptor adducts called metal complexes. Ligands that bind through one donor site are monodentate, ligands with two donor sites are bidentate, and those with more than two donor sites are polydentate ligands. For example, ethylene diamine is a bidentate ligand that binds through two nitrogen donor atoms, forming a five-membered ring. EDTA is a polydentate ligand that binds through four oxygen and two nitrogen...
Properties of Organometallic Compounds01:23

Properties of Organometallic Compounds

Organometallic compounds are compounds that contain a carbon–metal bond. Carbon belongs to an organyl group like alkyl, aryl, allyl, or benzyl groups. The metal can be from Group I or Group II of the periodic table, a transition metal, or a semimetal.
Ion Exchange01:17

Ion Exchange

Ion exchange chromatography separates charged molecules from a solution by reversibly exchanging them with mobile, or 'active', ions associated with the oppositely charged stationary phase. This method can be used to separate ions, soften and deionize water, and purify solutions. The polymers comprising the ion-exchange column are high-molecular-weight and chemically stable polymers, crosslinked to be porous and essentially insoluble. They are also functionalized with either acidic or basic...
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Consider the bromination of cyclopentene. Molecular bromine is polarized in the proximity of the π electrons of cyclopentene. An electrophilic bromine atom adds across the double bond, forming a cyclic bromonium ion intermediate.
Diazonium Group Substitution with Halogens and Cyanide: Sandmeyer and Schiemann Reactions01:20

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Arenediazonium substitution reactions occur when the diazonium group is substituted by various functional groups such as halides, hydroxyl, nitrile, etc. For instance, arenediazonium salts react with copper(I) salts of chloride, bromide, or cyanide to form corresponding aryl chlorides, bromides, and nitriles. These reactions are named Sandmeyer reactions. Although the mechanism of this reaction is complicated, as illustrated in Figure 1, they are believed to progress via an aryl copper...

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Updated: Jul 15, 2026

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of Chalcogenidoplumbates(II or IV)
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Published on: December 29, 2016

Binary Ge-Te Chalcogenide as a Toxic-Element-Free Platform for Polarity-Dependent Selector-Only Memory via

Minju Kim1, Byeongchan Sim1, Saegyoung Song1

  • 1Research Institute of Convergence of Basic Science, Department of Physics, Hanyang University, Seoul 04763, South Korea.

ACS Applied Materials & Interfaces
|July 13, 2026
PubMed
Summary

This study demonstrates selector-only memory (SOM) using a simple binary Germanium-Tellurium (Ge-Te) system. This toxic-element-free approach offers a scalable and efficient platform for next-generation memory devices.

Keywords:
binary Ge−Te chalcogenidechalcogenidelocal bonding reconfigurationsovonic threshold switchingpolarity-dependent threshold switchingselector-only memorytrap-assisted hopping conduction

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Area of Science:

  • Materials Science
  • Solid-State Electronics
  • Nanotechnology

Background:

  • Demand for high-density, energy-efficient memory drives development of simplified selector-only memory (SOM) architectures.
  • Existing SOM devices often use complex materials (multicomponent chalcogenides) or toxic elements, hindering scalability and fabrication.

Purpose of the Study:

  • To demonstrate SOM operation in a simple, scalable, and toxic-element-free binary Germanium-Tellurium (Ge-Te) system.
  • To identify the optimal composition window for pronounced SOM behavior and analyze trade-offs between performance and reliability.

Main Methods:

  • Systematic tuning of Ge-Te stoichiometry to identify a composition window for SOM.
  • Pulse-based electrical measurements to evaluate memory characteristics and reliability (endurance, retention).
  • Advanced characterization including TEM, XPS, and trap-assisted hopping modeling to understand the physical origin of SOM behavior.

Main Results:

  • Pronounced SOM behavior observed in binary Ge-Te, with a polarity-dependent threshold-voltage shift up to ~1.5 V.
  • Optimized Ge-Te composition shows endurance > 3x10^8 pulses and data retention ~10^8 s.
  • Analysis reveals polarity-driven modifications in local bonding and defect energetics cause asymmetric transport pathways.

Conclusions:

  • Binary Ge-Te is a viable, minimal, and toxic-element-free material platform for selector-only memory (SOM).
  • This work provides fundamental insights into the physical mechanisms governing SOM behavior in amorphous materials.
  • The Ge-Te system offers a promising pathway for developing next-generation memory technologies.