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High-Mobility Carrier Diffusion Visualization and Dynamic Engineering in Bi2O2Se Nanoplates.

Xin Li1,2, Li Zhou2,3, Wanxin Zheng2

  • 1School of Physical Science and Technology, Xinjiang University, Urumqi, Xinjiang 830046, China.

The Journal of Physical Chemistry Letters
|July 14, 2026
PubMed
Summary

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Researchers visualized photoexcited carrier transport in bismuth oxychalcogenide (Bi2O2Se) nanoplates. This study reveals high carrier mobility and diffusion, offering insights for advanced electronics.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Bismuth oxychalcogenide (Bi2O2Se) is a 2D layered material with potential for post-Moore electronics.
  • Its air stability, high carrier mobility, and native high-κ oxide are advantageous.
  • Direct visualization of photoexcited carrier dynamics in Bi2O2Se has been a significant challenge.

Purpose of the Study:

  • To overcome the challenge of visualizing spatiotemporal carrier behavior in Bi2O2Se.
  • To enable real-space imaging of carrier transport in Bi2O2Se nanoplates.
  • To provide a framework for optimizing materials and devices.

Main Methods:

  • Synergistic combination of microtransient absorption spectroscopy and wide-field transient absorption microscopy.

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  • Real-space imaging techniques to observe carrier dynamics.
  • Analysis of carrier diffusion and mobility in Bi2O2Se nanoplates.

    • Main Results:

    • Purely linear carrier diffusion was observed with a diffusion coefficient of 11.58 cm2/s.
    • Extracted carrier mobility reached approximately 448 cm2/(V·s), a high value for ultrathin layered semiconductors.
    • Material thickness and pump fluence were identified as key factors influencing carrier diffusion and dynamics.

    Conclusions:

    • The study advances the mechanistic understanding of carrier dynamics in layered semiconductor systems.
    • A direct experimental framework was established for guiding future material and device optimization.
    • High carrier mobility and controllable diffusion in Bi2O2Se highlight its promise for electronic applications.