Copper Oxide Thin Films: Fabrication, Properties and Applications in Gas Sensing and Photoelectric Devices

Copper oxide (CuO) has emerged as a promising p-type semiconductor for a wide range of applications, including gas sensing and photoelectric devices. This is due to its narrow band gap, high chemical stability and low cost. In recent years, increasing attention has been paid to the development of high-quality CuO thin films with precisely controlled structural and electronic properties. Among various fabrication techniques, atomic layer deposition (ALD) provides unique advantages like excellent thickness control, conformality and tunability of film composition at the atomic scale. This review provides a comprehensive overview of CuO thin films with a particular focus on ALD-based fabrication approaches. First, conventional deposition methods are briefly discussed. Next, the fundamentals of ALD processes for CuO growth are presented including precursor chemistry, reaction mechanisms and the influence of key process parameters. Special attention is given to the correlation between deposition conditions and the resulting structural, optical and electrical properties of the films. Subsequently, the impact of these properties on device performance is analyzed in the context of gas sensing and photoelectric applications. Finally, current challenges and future perspectives are outlined, emphasizing the need for improved control over phase composition, defect engineering, and integration with nanostructured systems.