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Published on: December 5, 2015
Utilization of NdNb2O7 Nanosheets as Semiconducting Dielectrics in Field-Effect Transistors and Dual-Band
Jie Zhang1,2, Jiaojiao Liu1, Yong Zhang1,3
1School of Electronic and Information Engineering, Suzhou University of Technology, Changshu215500, China.
Abstract:
Two-dimensional (2D) NdNb2O7 (NNO) nanosheets prepared via liquid-phase exfoliation have recently been demonstrated for ultraviolet (UV) photodetection. Beyond their intrinsic photosensitivity, 2D NNO also possesses outstanding dielectric characteristics. In this work, the dielectric constant (κ) of 2D NNO was measured to be 34.8 using electrostatic force microscopy (EFM) based on atomic force microscopy (AFM). Benefiting from such high-κ properties, exfoliated NNO nanosheets were monolithically integrated with 2D SnS2 channels via a simple transfer method to act as top-gate dielectric layers in field-effect transistors (FETs). Under top-gate electrostatic modulation, the as-constructed FET exhibits a high on/off ratio of 4 × 103. Moreover, the integrated NNO/SnS2 heterostructure device realizes dual-band UV-visible photodetection. Specifically, the visible-light response stems exclusively from SnS2-generated photocurrent, while the UV response originates from the synergistic effect induced by simultaneous photocarrier generation in SnS2 and NNO. Accordingly, the NNO/SnS2 photodetector (PD) achieves a maximum responsivity of 157.9 A·W-1 and a detectivity of 4.7 × 1012 Jones at 3 V under 300 nm illumination. This work underscores the promising potential of 2D perovskite oxides as photosensitive high-κ dielectrics toward high-performance electronic and optoelectronic applications.
