Related Experiment Video

Updated: Jul 17, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Fractional high-Chern insulator in twisted rhombohedral graphene

Zexu Li1, Wenxuan Wang2, Fajie Wang1

  • 1International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.

Nature
|July 15, 2026
PubMed

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