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Published on: October 12, 2019
Strain-Tunable Phonon Coupling and Polarization Optoelectronics in Supersaturation-Grown Boron Phosphide Nanowires
Chuang Hou1,2,3, Qilong Wu1, Xin Wu3
1State Key Laboratory of Mechanics and Control for Aerospace Structures, Key Laboratory of Intelligent Nano Materials and Devices of Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing, China.
Abstract:
Boron phosphide (BP) nanowires represent a rare 1D semiconductor, combining outstanding chemical stability, ultrahigh hardness, and high thermal conductivity. However, their controlled growth and optical functionality remain largely unexplored due to irregular morphologies, toxic precursors, and complex synthesis routes. Here, we develop a supersaturation-engineered chemical vapor transport (CVT) strategy to synthesize air-stable, single-crystalline cubic BP nanowires with tunable diameters. Strain-engineered Raman spectroscopy reveals pronounced phonon broadening and symmetry-selective frequency shifts, uncovering strong strain-phonon coupling. The inherent noncentrosymmetry and nanoscale confinement further induce highly anisotropic Raman and polarization-resolved SHG responses. The BP nanowires show remarkable environmental stability over 12 months and competitive photodetector performance, with a responsivity of 5.2 × 104 A/W and detectivity exceeding 6.4 × 1011 Jones under 595 nm illumination. The device also shows good ambient-storage stability and flexible-substrate compatibility. Integration with MoS2 amplifies polarization discrimination, achieving an anisotropy ratio of 2.87 at 532 nm, surpassing previously reported low-dimensional systems. This work establishes strain-phonon coupling-mediated polarization control as a new paradigm for BP-based optoelectronic and photonic platforms.

