Dual-Band Photoelectric Memristor Based on Zinc Oxide and Vanadium Oxide with Non-Volatile Optoelectronic Behavior

Area of Science:

• Materials Science
• Nanotechnology
• Semiconductor Devices

Background:

• The von Neumann bottleneck hinders computational efficiency.
• Photonic memristors offer solutions but face challenges like narrow spectral response and volatile memory.

Purpose of the Study:

• To develop a ZnO/VO2 memristor with dual functions of multi-wavelength sensing and non-volatile resistive switching.
• To overcome the limitations of conventional photonic memristors.

Main Methods:

• Fabrication of a ZnO/VO2 heterostructure memristor.
• Investigation of optical sensing capabilities across different wavelengths (UV and NIR) due to bandgap differences.
• Analysis of ion migration and conductive filament formation under electrical bias and light excitation.
• Evaluation of non-volatile resistance switching characteristics and stability.

Main Results:

• The ZnO/VO2 memristor exhibits dual-band sensing (UV and NIR) owing to the distinct bandgaps of ZnO (3.2 eV) and VO2 (0.6 eV).
• Electric field-induced ion redistribution and photogenerated carriers facilitate the formation and retention of conductive filaments, enabling non-volatile resistance switching.
• The device demonstrates robust non-volatility (>2 h) and a high switching ratio (~10^3) under dual-band illumination (365 nm UV/760 nm NIR) at 1 V bias.
• Performance is significantly superior to single-layer memristor counterparts.

Conclusions:

• The developed ZnO/VO2 memristor successfully integrates multi-wavelength optical sensing and non-volatile memory functions.
• This approach provides a robust strategy for advancing photoelectric memristor applications and addressing the von Neumann bottleneck.
• The device shows potential for next-generation optoelectronic computing systems.