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Published on: July 28, 2020
Iodine incorporated direct band gap materials for enhanced electrochemical hydrogen evolution: role of structural
Abinash Pradhan1, Thillai Natarajan M2, Rajanikanta Rana3
1Solid State and Materials Laboratory, Department of Chemistry, National Institute of Technology, Rourkela-769008, India. samalsaroj@nitrkl.ac.in.
Abstract:
All inorganic two-dimensional (2D) (trigonal Cs3Sb2X9 phase) halide perovskite like materials generate enormous research interest due to their excellent optoelectronic properties. Understanding the relationships among phase stability, bonding interactions, and electronic properties is crucial for the design and optimization of the optoelectronic characteristics of these materials for advanced technological applications. In this article, we have thoroughly studied the phase stability of different polymorphs of Cs3Sb2X9 (X = Cl, I) and their potential electrocatalytic H2 evolution reaction. The synthesis of Cs3Sb2I9via the solution method at low temperature resulted in a 0D hexagonal phase. Furthermore, heating the hexagonal phase at 600 °C in a sealed silica tube led to structural phase transformation into the thermodynamically stable 2D (layered) trigonal phase. Mixed halides, Cs3Sb2Cl9-xIx, were synthesized to systematically modulate the optical and electronic properties. Optical study shows that pristine trigonal Cs3Sb2Cl9 and hexagonal Cs3Sb2I9 exhibit indirect band gaps of 2.87 eV and 1.95 eV, respectively, whereas the trigonal polymorph of Cs3Sb2I9 has a direct band gap of 1.89 eV. Progressive substitution of I- for Cl- in the trigonal layered Cs3Sb2Cl9-xIx phase results in an indirect to direct band gap transition. Theoretical study confirms the band type transition from an indirect to direct band gap in Cs3Sb2Cl9-xIx upon substitution of one mole of iodine at the chlorine site. It is observed that with I- substitution, the valence band maximum remains unaltered, whereas the conduction band minimum changes from the A point to the Γ point. From a detailed analysis of the density of states (DOS) and the structural variation, it is evident that electronic structure modification induced by structural distortion plays an important role in driving the band type transition in these compounds. Electrocatalytic studies show that the direct band gap layered Cs3Sb2I9 compound has superior hydrogen evolution reaction (HER) performance (20 460 μmol g-1 h-1) compared with the indirect band gap 0D Cs3Sb2I9 phase and other direct band gap mixed compositions. The direct band gap nature and relatively weak Sb-I bond are primarily responsible for the observed superior electrocatalytic hydrogen evolution reaction in trigonal Cs3Sb2I9.
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