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High Power Factor in Polycrystalline InGaSb Thin Films via Nanoscale Compositional Fluctuations
Takamitsu Ishiyama1,2, Akira Ogawa2, Noriyuki Saitoh3
1Research Institute for Energy Efficient Technologies, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.
ACS Applied Materials & Interfaces
|July 21, 2026
Summary
Researchers optimized Indium Gallium Antimonide (InGaSb) thin films for thermoelectrics. Controlling deposition parameters enhanced the Seebeck coefficient and power factor near room temperature, showing promise for efficient thermoelectric devices.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- III-V compound semiconductors offer potential for thin-film thermoelectric applications due to their narrow bandgaps.
- Achieving efficient thermoelectric performance requires careful control over material composition and microstructure.
Purpose of the Study:
- To investigate the effects of deposition temperature and Indium (In) flux on polycrystalline InGaSb thin films.
- To identify key parameters for controlling phase competition and nanoscale compositional fluctuations.
- To optimize thermoelectric properties of InGaSb thin films for near-room-temperature applications.
Main Methods:
- Systematic investigation of polycrystalline InGaSb thin films deposited on glass substrates.
- Modulation of Indium supply to control precipitate formation and matrix composition.
- Variation of deposition temperature to tune structural disorder and nanoscale features.
- Raman spectroscopy analysis to evaluate structural disorder and nanoscale features.
Main Results:
- Deposition temperature and In flux were identified as critical parameters influencing phase competition and nanoscale compositional fluctuations.
- Discontinuous In-rich precipitates were formed by modulating In supply, while the matrix composition was tuned.
- Increased structural disorder at higher deposition temperatures (560 °C) correlated with an enhanced Seebeck coefficient.
- A high power factor of 1200 µW m⁻² K⁻² was achieved near room temperature without significant loss in electrical conductivity.
Conclusions:
- Growth-parameter-driven control over microstructure and phase is an effective strategy for enhancing thermoelectric performance in multicomponent III-V thin films.
- Optimized InGaSb thin films demonstrate significant potential for efficient thermoelectric energy conversion near room temperature.
- This study provides a pathway for developing advanced thermoelectric materials through precise control of thin-film deposition processes.
