Non-epitaxial perovskite polariton laser diode operating under direct current

Area of Science:

• Optoelectronics
• Materials Science
• Semiconductor Physics

Background:

• Electrically pumped lasing in microdevices using solution-processed semiconductors remains a significant hurdle.
• Halide perovskites show promise for electrical injection due to low lasing thresholds in optically excited cavities.
• Previous attempts at direct electrical pumping have not yet achieved lasing.

Purpose of the Study:

• To develop a novel strategy for direct electrical pumping of perovskite lasers.
• To demonstrate lasing in a perovskite microcavity diode via charge-carrier injection.

Main Methods:

• Integration of a solution-grown CsPbBr3 microplate with single-walled carbon nanotube (SWCNT) electrodes.
• Formation of a perovskite p-i-n diode within an optical microcavity.
• Operation of the microdevice at 8 K under a constant direct current.

Main Results:

• The perovskite microcavity diode achieved balanced carrier injection at high current densities.
• The device operated in the strong coupling regime.
• Polariton lasing was observed under a direct current of 65 μA.

Conclusions:

• Direct electrical pumping of perovskite lasers is feasible using integrated microcavity diodes.
• This work presents a new strategy for achieving efficient charge-carrier injection in perovskite optoelectronic devices.
• The demonstrated polariton lasing opens avenues for low-threshold, electrically driven perovskite light sources.