Atomically Precise Ti-Zr Heterometallic Oxo Clusters for High-Sensitivity and High-Resolution Single-Component...

Area of Science:

• Materials Science
• Nanotechnology
• Chemical Engineering

Background:

• Extreme ultraviolet (EUV) lithography is crucial for semiconductor manufacturing.
• Photoresists are key consumables that determine lithography efficiency and performance.
• Enhancing photoresist sensitivity and resolution is vital for advanced patterning.

Purpose of the Study:

• To design and synthesize novel Ti-Zr heterometallic oxo clusters (TiZrs) for EUV lithography.
• To evaluate the film formation, thermal stability, and lithographic performance of TiZrs.
• To investigate the photoreaction mechanism of TiZrs for improved material design.

Main Methods:

• Straightforward synthesis of two Ti-Zr heterometallic oxo clusters.
• Characterization of film formation properties and thermal stability.
• Evaluation of lithographic performance, including sensitivity, resolution, and etching selectivity under EUV and electron beam (EB) lithography.

Main Results:

• TiZrs exhibited superior film formation and excellent thermal stability.
• TiZr2, with higher Ti content and cleavable bonds, showed increased sensitivity.
• High-resolution patterns with low line-edge roughness and high silicon etching selectivity were achieved using TiZr2 as a single-component photoresist.
• The photoreaction mechanism of TiZrs was systematically investigated.

Conclusions:

• Tailoring heterometal and heteroligand strategies in oxo clusters is effective for enhancing lithography sensitivity.
• TiZr2 demonstrates significant potential as a high-performance photoresist for EUV and EB lithography.
• These findings provide valuable insights for the future design of advanced lithographic materials.