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Gate-tunable mid-infrared electroluminescence from Te/MoS2 p-n heterojunctions
Shiyu Wang1, Delang Liang1,2, Zhi Zheng3
1International Center for Quantum Materials, School of Physics, Peking University, Beijing, China.
Light, Science & Applications
|July 26, 2026
Summary
Researchers developed a novel mid-infrared light-emitting diode using tellurium and transition metal dichalcogenide MoS2. This gate-tunable device offers a promising platform for integrated optoelectronics, overcoming limitations of current technologies.
Area of Science:
- Optoelectronics
- Materials Science
- Condensed Matter Physics
Background:
- Mid-infrared (MIR) emitters are crucial for sensing, diagnostics, and communications.
- Conventional MIR emitters face integration challenges with CMOS and flexible platforms.
- Two-dimensional (2D) materials offer potential but struggle with stability and efficiency.
Purpose of the Study:
- To demonstrate a gate-tunable MIR light-emitting diode (LED) using a novel heterojunction.
- To explore the potential of tellurium (Te) and transition metal dichalcogenide (TMD) materials for MIR optoelectronics.
- To overcome the limitations of existing MIR emitter technologies.
Main Methods:
- Fabrication of a van der Waals heterojunction device using multilayer MoS2 and Te.
- Characterization of electroluminescence (EL) properties under varying temperature, bias, and gate voltage.
- Analysis of gate-tunable band alignment and injection efficiency.
Main Results:
- Demonstrated a polarized MIR LED emitting at 3.5 μm at 25 K, persisting up to 80 K.
- Showcased gate-tunability of EL intensity by modulating MoS2 Fermi level and band alignment.
- Confirmed spectrally stable emission, indicating robust band-edge recombination.
Conclusions:
- The Te/TMD heterostructure is a viable platform for integrated polarized MIR optoelectronics.
- Gate-tunable MIR LEDs based on this heterostructure offer dynamic control over emission.
- This technology advances the development of next-generation MIR photonic systems.
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