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Two-Factor Authentication of Dynamic Disorder for Computational Screening of High-Mobility Organic Semiconductors
Andrey Yu Sosorev1,2, Mikhail V Vener3, Dmitry Yu Paraschuk1
1Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory 1/62, Moscow119991, Russia.
Abstract:
Suppression of dynamic disorder, i.e., thermal fluctuations of intermolecular transfer integrals J, is a cornerstone of efficient charge transport in crystalline organic semiconductors (OSCs). Physically, disorder amplitude σJ is a product of two factors: molecular coordinate fluctuations, depending on the strength of intermolecular interactions in an OSC, and the corresponding gradient ∇J. We build this insight into a family of new disorder descriptors, TIGER, and a computational screening protocol based thereupon, demonstrating their transferability and power to reveal both new structures with calculated intrinsic mobilities up to 60 cm2 V-1 s-1 and previously known high-mobility OSCs. As a result, our physics-inspired two-factor feature engineering and computational screening methodology provides ready-to-use tools for efficient digital materials discovery.

